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Publications by Erik Lind
Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
IEEE Transactions on Microwave Theory and Techniques
Electronic Engineering
Radiation
Electrical
Condensed Matter Physics
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Vertical Nanowire TFETs With Channel Diameter Down to 10 Nm and Point S MIN of 35 mV/decade
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Thin Electron Beam Defined Hydrogen Silsesquioxane Spacers for Vertical Nanowire Transistors
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
Films
Process Chemistry
Coatings
Technology
Four Weeks of Off-Season Training Improves Peak Oxygen Consumption in Female Field Hockey Players
Sports
Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V
InGaAs Nanowire MOSFETs With ION = 555 µA/µm at IOFF = 100 nA/µm and VDD = 0.5 V
