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Publications by F. Ishizaka
Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
ECS Transactions
Engineering
Related publications
Growth and Characterization of InGaAs Nanowires Formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Selective Wet Etching of GaAs on AlxGa1−xAs for AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor
Journal of Applied Physics
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Position-Controllable Ge Nanowires Growth on Patterned Au Catalyst Substrate
Applied Physics Express
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Catalyst-Free Growth of GaAs Nanowires by Selective-Area Metalorganic Vapor-Phase Epitaxy
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Indium-Assisted Growth of Si Nanowires: Perspectives on Controlled Growth for CMOS Applications
Materials Research Society Symposium - Proceedings
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Selective Wet-Etching of Silicon Germanium in Composite Vertical Nanowires
ACS Applied Materials & Interfaces
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Selective-Area Growth of Vertically Aligned GaAs and GaAs/AlGaAs Core–shell Nanowires on Si(111) Substrate
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Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
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High-Efficiency P-I-N Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
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