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Publications by Karl-Magnus Persson
A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Vertical InAs Nanowire MOSFETs With IDS = 1.34 mA/µm and Gm = 1.19 mS/µm at VDS = 0.5 V
Related publications
180 Nm Metal Gate, High-K Dielectric, Implant-Free III–V MOSFETs With Transconductance of Over 425 [Micro Sign]S∕[micro Sign]m
Electronics Letters
Electronic Engineering
Electrical
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Characterization of Strain in Si for High Performance MOSFETs
Sub-Micron, Metal Gate, High-к Dielectric, Implant-Free, Enhancement-Mode III-V Mosfets
Low-Frequency Noise in High-K LaLuO3/TiN MOSFETs
Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method
Applied Physics Letters
Astronomy
Physics
A Machine Learning Method for High-Frequency Data Forecasting
Lecture Notes in Computer Science
Computer Science
Theoretical Computer Science
Non-Idealities in the 3ω Method for Thermal Characterization in the Low- And High-Frequency Regimes
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
