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Publications by Minhan Mi
The Characteristics of Fluorinated Gate Dielectric AlGaN/GaN MIS-HEMT
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Related publications
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching
ECS Transactions
Engineering
Quantitative Characteristics of Traps in AlGaN/GaN MIS-HEMT via Transient Capacitance Measurement
Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer
ECS Meeting Abstracts
A Planar Distributed Channel AlGaN/GaN HEMT Technology
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT
Progress In Electromagnetics Research Letters
Optical
Electronic
Magnetic Materials
The Investigation of AlGaN/GaN HEMT Failure Mechanisms Under Different Temperature Conditions
Broadband AlGaN/GaN HEMT MMIC Attenuators With High Dynamic Range
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
The Instability of the CV Characteristics Capacitance When Measuring AlGaN/GaN–heterostructures and the HEMT–transistors Based on Them
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
