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Publications by Ryosuke Ishii

Forward Voltage Degradation of 4h-SiC Pin Diodes and High Voltage 4h-SiC Pin Diodes on the (000-1) C-Face With Reduced Forward Degradation

IEEJ Transactions on Industry Applications

Electronic Engineering

Manufacturing Engineering

English

Related publications

Characterization of In-Grown Stacking Faults in 4H–SiC (0001) Epitaxial Layers and Its Impacts on High-Voltage Schottky Barrier Diodes

Applied Physics Letters

English

High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

Materials Science Forum

English

Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes

Materials Science

Inorganic Chemistry

Chemical Engineering

Condensed Matter Physics

English

Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC

IEEE Electron Device Letters

Electronic Engineering

Magnetic Materials

English

Theoretical and Experimental Study of 13.4 kV/55 a SiC PiN Diodes With an Improved Trade-Off Between Blocking Voltage and Differential On-Resistance

Materials Science

Condensed Matter Physics

English

Modeling of Inhomogeneous 4h-SiC Schottky and JBS Diodes in a Wide Temperature Range

Materials Science Forum

English

Characterization of Schottky Diodes on 4h-SiC With Various Off-Axis Angles Grown by Sublimation Epitaxy

Materials Science Forum

English

Influence of Different Peripheral Protections on the Breakover Voltage of a 4h-SiC GTO Thyristor

Materials Science Forum

English

Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English