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Publications by T. Kanemura
Advantage of Plasma Doping for Source/Drain Extension in Bulk-FinFET
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Modeling of Parasitic Source/Drain Resistance in FinFET Considering 3D Current Flow
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32 Nm Gate Length FinFET: Impact of Doping
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Experimental and Simulation Study of the Schottky Barrier Lowering by Substrate Doping Variation for PtSi Source/Drain SBFETs
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Iskeiretsureally a Source of Competitive Advantage for Japanese Automotive Suppliers?
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Paying More for Less: Why Don't Households in Tanzania Take Advantage of Bulk Discounts?
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Materials Research Society Symposium - Proceedings
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Influence of Antimony Trioxide Nanoparticle Doping on Superconductivity in MgB2 Bulk
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