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Publications by Tetsuya Suemitsu
InP and GaN High Electron Mobility Transistors for Millimeter-Wave Applications
IEICE Electronics Express
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
Related publications
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Physisorption of Functionalized Gold Nanoparticles on AlGaN/GaN High Electron Mobility Transistors for Sensing Applications
Applied Physics Letters
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Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors
Applied Physics Letters
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CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors
Applied Physics Letters
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Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
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InAs Thin-Channel High-Electron-Mobility Transistors With Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
Applied Physics Express
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Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
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Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
