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Publications by C. J. Tun
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Related publications
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Surface Passivation of GaN and GaN/AlGaN Heterostructures by Dielectric Films and Its Application to Insulated-Gate Heterostructure Transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Influence of the Ratio of Gate Length to Drain-To-Source Distance on the Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Reverse Gate Bias Stress on High-Voltage AlGaN/GaN-on-Si Heterostructure FETs
Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
Astronomy
Physics
COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS
Electronic engineering. Series 2. Semiconductor device
