Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Daisuke Kosemura
Characterization of Strain in Si for High Performance MOSFETs
Related publications
Noise in Si and SiGe MOSFETs With High-K Gate Dielectrics
AIP Conference Proceedings
Astronomy
Physics
High Performance, Strained-Ge, Heterostructure P-MOSFETs
A High-Frequency Transconductance Method for Characterization of High- $\Kappa$ Border Traps in III-V MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Two-Dimensional Carrier Transport in Si MOSFETs
VLSI Design
Electronic Engineering
Computer Graphics
Hardware
Electrical
Architecture
Computer-Aided Design
Effective Schottky Barrier Lowering of Ni Silicide/P-Si(100) Using an Ytterbium Confinement Structure for High Performance N-Type MOSFETs
Materials and Design
Mechanics of Materials
Materials Science
Mechanical Engineering
High-Performance Si Microwire Photovoltaics
Energy and Environmental Sciences
Sustainability
Renewable Energy
Nuclear Energy
Environmental Chemistry
Engineering
the Environment
Pollution
Vertical InAs/InGaAs Heterostructure MOSFETs on Si
Nano Letters
Materials Science
Condensed Matter Physics
Mechanical Engineering
Nanoscience
Bioengineering
Nanotechnology
Chemistry
Cryogenic Characterization of Commercial SiC Power MOSFETs
Materials Science Forum
Back-Gated Buried Oxide MOSFETs in a High-Voltage Bipolar Technology for Bonded Oxide/Soi Interface Characterization
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
