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Publications by N. Ilinskaya
Mechanism of Radio-Frequency Current Collapse in GaN–AlGaN Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
7.5 kW/mm2 Current Switch Using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates
Electronics Letters
Electronic Engineering
Electrical
Related publications
Si3N4/AlGaN/GaN–metal–insulator–semiconductor Heterostructure Field–effect Transistors
Applied Physics Letters
Astronomy
Physics
Comparison of Low-Temperature GaN, SiO2, and SiNx as Gate Insulators on AlGaN∕GaN Heterostructure Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS
Electronic engineering. Series 2. Semiconductor device
Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Gate Current Analysis of AlGaN/GaN on Silicon Heterojunction Transistors at the Nanoscale
Applied Physics Letters
Astronomy
Physics
Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
